STMicroelectronics STL23NM50N
Product Information
Detailed Description:
N-Channel 500V 2.8A (Ta), 14A (Tc) 3W (Ta), 125W (Tc) Surface Mount PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
STL23
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Rds On (Max) @ Id, Vgs:
210mOhm @ 7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1330pF @ 50V
Mounting Type:
Surface Mount
Series:
MDmesh™ II
Supplier Device Package:
PowerFlat™ (8x8) HV
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.8A (Ta), 14A (Tc)
Customer Reference:
Power Dissipation (Max):
3W (Ta), 125W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship STL23NM50N Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STL23NM50N. It features n-channel 500v 2.8a (ta), 14a (tc) 3w (ta), 125w (tc) surface mount powerflat™ (8x8) hv. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: stl23. The maximum gate charge and given voltages include 45nc @ 10v. It has a maximum Rds On and voltage of 210mohm @ 7a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 1330pf @ 50v. The product is available in surface mount configuration. The product mdmesh™ ii, is a highly preferred choice for users. powerflat™ (8x8) hv is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.8a (ta), 14a (tc). The product carries maximum power dissipation 3w (ta), 125w (tc). This product use mosfet (metal oxide) technology.
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