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Toshiba Semiconductor and Storage TK31N60X,S1F

TK31N60X-S1F Toshiba Semiconductor and Storage TK31N60X,S1F
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
88mOhm @ 9.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
65 nC @ 10 V
Vgs(th) (Max) @ Id:
3.5V @ 1.5mA
edacadModel:
TK31N60X,S1F Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4815220
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
230W (Tc)
standardLeadTime:
52 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3000 pF @ 300 V
Mounting Type:
Through Hole
Series:
DTMOSIV-H
Supplier Device Package:
TO-247
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
30.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK31N60
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK31N60X,S1F. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 88mohm @ 9.4a, 10v. The maximum gate charge and given voltages include 65 nc @ 10 v. The typical Vgs (th) (max) of the product is 3.5v @ 1.5ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 230w (tc). It has a long 52 weeks standard lead time. The product's input capacitance at maximum includes 3000 pf @ 300 v. The product is available in through hole configuration. The product dtmosiv-h, is a highly preferred choice for users. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 30.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk31n60, a base product number of the product. The product is designated with the ear99 code number.

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We accept all major payment methods for all products including ET11424922. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TK31N60X,S1F directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK31N60X,S1F. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK31N60X,S1F.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11424922 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11424922.
Yes. We ship TK31N60X,S1F Internationally to many countries around the world.