Infineon Technologies IRFI1010NPBF
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
12mOhm @ 26A, 10V
edacadModel:
IRFI1010NPBF Models
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/812251
Package:
Tube
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
58W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220AB Full-Pak
Current - Continuous Drain (Id) @ 25°C:
49A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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We accept all major payment methods for all products including ET11402124. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IRFI1010NPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IRFI1010NPBF. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IRFI1010NPBF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11402124 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11402124.
Yes. We ship IRFI1010NPBF Internationally to many countries around the world.
This is manufactured by Infineon Technologies. The manufacturer part number is IRFI1010NPBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 12mohm @ 26a, 10v. The maximum gate charge and given voltages include 130 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 58w (tc). The product's input capacitance at maximum includes 2900 pf @ 25 v. The product is available in through hole configuration. The product hexfet®, is a highly preferred choice for users. to-220ab full-pak is the supplier device package value. The continuous current drain at 25°C is 49a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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