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STMicroelectronics STL18N65M2

STL18N65M2 STMicroelectronics
STL18N65M2
STMicroelectronics

Product Information

Category:
Power MOSFET
Dimensions:
6.35 x 5.4 x 0.95mm
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
5.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
715 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
365 mΩ
Package Type:
PowerFLAT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
764 pF @ 100 V
Length:
6.35mm
Pin Count:
8
Typical Turn-Off Delay Time:
46 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
57 W
Series:
MDmesh M2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
0.95mm
Typical Turn-On Delay Time:
11 ns
Forward Diode Voltage:
1.6V
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
365mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
21.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STL18N65M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5244747
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
764 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ M2
Supplier Device Package:
PowerFlat™ (5x6) HV
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL18
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STL18N65M2. It is of power mosfet category . The given dimensions of the product include 6.35 x 5.4 x 0.95mm. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.4mm wide. The product offers single transistor configuration. It has a maximum of 715 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 365 mω maximum drain source resistance. The package is a sort of powerflat. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 764 pf @ 100 v . Its accurate length is 6.35mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 46 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 57 w maximum power dissipation. The product mdmesh m2, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 0.95mm. In addition, it has a typical 11 ns turn-on delay time . Its forward diode voltage is 1.6v . It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 365mohm @ 4a, 10v. The maximum gate charge and given voltages include 21.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 57w (tc). The product's input capacitance at maximum includes 764 pf @ 100 v. It has a long 16 weeks standard lead time. The product mdmesh™ m2, is a highly preferred choice for users. powerflat™ (5x6) hv is the supplier device package value. The continuous current drain at 25°C is 8a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stl18, a base product number of the product. The product is designated with the ear99 code number.

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STL18N65M2 N-channel 650 V 8 A MDmesh Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Wafer Site Add 3/Aug/2018(PCN Assembly/Origin)
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STL18N65M2(Datasheets)
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Mult Dev Inner Box Chg 9/Dec/2021(PCN Packaging)

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Yes. We ship STL18N65M2 Internationally to many countries around the world.