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Vishay Siliconix SIS436DN-T1-GE3

SIS436DN-T1-GE3 Vishay Siliconix
SIS436DN-T1-GE3
Vishay Siliconix

Product Information

Detailed Description:
N-Channel 25V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Base Part Number:
SIS436
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
855pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Customer Reference:
Power Dissipation (Max):
3.5W (Ta), 27.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIS436DN-T1-GE3. It features n-channel 25v 16a (tc) 3.5w (ta), 27.7w (tc) surface mount powerpak® 1212-8. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8. Base Part Number: sis436. The maximum gate charge and given voltages include 22nc @ 10v. It has a maximum Rds On and voltage of 10.5mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 855pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® 1212-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 16a (tc). The product carries maximum power dissipation 3.5w (ta), 27.7w (tc). This product use mosfet (metal oxide) technology.

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Mult Mosfet EOL 30/Aug/2018(PCN Obsolescence/ EOL)
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SIS436DN(Datasheets)

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FAQs

Yes. You can also search SIS436DN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11312614. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIS436DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIS436DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIS436DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11312614 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11312614.
Yes. We ship SIS436DN-T1-GE3 Internationally to many countries around the world.