STMicroelectronics STS11N3LLH5
Product Information
Detailed Description:
N-Channel 30V 11A (Tc) 2.7W (Tc) Surface Mount 8-SO
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
STS11
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
14mOhm @ 5.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
+22V, -20V
Input Capacitance (Ciss) (Max) @ Vds:
724pF @ 25V
Mounting Type:
Surface Mount
Series:
STripFET™ V
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Customer Reference:
Power Dissipation (Max):
2.7W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship STS11N3LLH5 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STS11N3LLH5. It features n-channel 30v 11a (tc) 2.7w (tc) surface mount 8-so. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: sts11. The maximum gate charge and given voltages include 5nc @ 4.5v. It has a maximum Rds On and voltage of 14mohm @ 5.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The stmicroelectronics's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is +22v, -20v. The product's input capacitance at maximum includes 724pf @ 25v. The product is available in surface mount configuration. The product stripfet™ v, is a highly preferred choice for users. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 11a (tc). The product carries maximum power dissipation 2.7w (tc). This product use mosfet (metal oxide) technology.
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