STMicroelectronics STB10N65K3
Product Information
Detailed Description:
N-Channel 650V 10A (Tc) 150W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
4.5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STB10N6
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 10V
Rds On (Max) @ Id, Vgs:
1Ohm @ 3.6A, 10V
FET Type:
N-Channel
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1180pF @ 25V
Mounting Type:
Surface Mount
Series:
SuperMESH3™
Supplier Device Package:
D2PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Customer Reference:
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship STB10N65K3 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STB10N65K3. It features n-channel 650v 10a (tc) 150w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 4.5v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: stb10n6. The maximum gate charge and given voltages include 42nc @ 10v. It has a maximum Rds On and voltage of 1ohm @ 3.6a, 10v. It carries FET type n-channel. The stmicroelectronics's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1180pf @ 25v. The product is available in surface mount configuration. The product supermesh3™, is a highly preferred choice for users. d2pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10a (tc). The product carries maximum power dissipation 150w (tc). This product use mosfet (metal oxide) technology.
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