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Toshiba Semiconductor and Storage TPH2R306NH,L1Q

TPH2R306NH-L1Q Toshiba Semiconductor and Storage TPH2R306NH,L1Q
TPH2R306NH,L1Q
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 60V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
TLP250
Gate Charge (Qg) (Max) @ Vgs:
72nC @ 10V
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 30A, 10V
FET Type:
N-Channel
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6100pF @ 30V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On):
6.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Customer Reference:
Power Dissipation (Max):
1.6W (Ta), 78W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH2R306NH,L1Q. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 60v 60a (tc) 1.6w (ta), 78w (tc) surface mount 8-sop advance (5x5). The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: tlp250. The maximum gate charge and given voltages include 72nc @ 10v. It has a maximum Rds On and voltage of 2.3mohm @ 30a, 10v. It carries FET type n-channel. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6100pf @ 30v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-sop advance (5x5) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). The product carries maximum power dissipation 1.6w (ta), 78w (tc). This product use mosfet (metal oxide) technology.

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPH2R306NH,L1Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPH2R306NH,L1Q.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11213172 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11213172.
Yes. We ship TPH2R306NH,L1Q Internationally to many countries around the world.