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Toshiba Semiconductor and Storage TJ20S04M3L(T6L1,NQ

TJ20S04M3L-T6L1-NQ Toshiba Semiconductor and Storage TJ20S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
22.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 10 V
Vgs(th) (Max) @ Id:
3V @ 1mA
edacadModel:
TJ20S04M3L(T6L1,NQ Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/2768807
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
+10V, -20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
41W (Tc)
standardLeadTime:
74 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1850 pF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
DPAK+
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TJ20S04
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TJ20S04M3L(T6L1,NQ. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 22.2mohm @ 10a, 10v. The maximum gate charge and given voltages include 37 nc @ 10 v. The typical Vgs (th) (max) of the product is 3v @ 1ma. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is +10v, -20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 41w (tc). It has a long 74 weeks standard lead time. The product's input capacitance at maximum includes 1850 pf @ 10 v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. dpak+ is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 20a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tj20s04, a base product number of the product. The product is designated with the ear99 code number.

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Mosfets Prod Guide(Datasheets)

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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TJ20S04M3L(T6L1,NQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TJ20S04M3L(T6L1,NQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11192532 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11192532.
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