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Vishay Siliconix SI3456DDV-T1-E3

SI3456DDV-T1-E3 Vishay Siliconix
SI3456DDV-T1-E3
Vishay Siliconix

Product Information

Detailed Description:
N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
SI3456
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 10V
Rds On (Max) @ Id, Vgs:
40mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
325pF @ 15V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.3A (Tc)
Customer Reference:
Power Dissipation (Max):
1.7W (Ta), 2.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SI3456DDV-T1-E3. It features n-channel 30v 6.3a (tc) 1.7w (ta), 2.7w (tc) surface mount 6-tsop. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: si3456. The maximum gate charge and given voltages include 9nc @ 10v. It has a maximum Rds On and voltage of 40mohm @ 5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 325pf @ 15v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.3a (tc). The product carries maximum power dissipation 1.7w (ta), 2.7w (tc). This product use mosfet (metal oxide) technology.

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SI3456DDV(Datasheets)

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FAQs

Yes. You can also search SI3456DDV-T1-E3 on website for other similar products.
We accept all major payment methods for all products including ET11133970. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SI3456DDV-T1-E3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SI3456DDV-T1-E3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI3456DDV-T1-E3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11133970 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11133970.
Yes. We ship SI3456DDV-T1-E3 Internationally to many countries around the world.