Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

STMicroelectronics STP210N75F6

STP210N75F6 STMicroelectronics
STP210N75F6
STMicroelectronics

Product Information

Category:
Power MOSFET
Dimensions:
10.4 x 4.6 x 15.75mm
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
171 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
11800 pF @ 25 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
154 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
DeepGate, STripFET
Maximum Gate Source Voltage:
±20 V
Height:
15.75mm
Typical Turn-On Delay Time:
34 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.7 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs:
171 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
11800 pF @ 25 V
Mounting Type:
Through Hole
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP210
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STP210N75F6. It is of power mosfet category . The given dimensions of the product include 10.4 x 4.6 x 15.75mm. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 75 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 171 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 11800 pf @ 25 v . Its accurate length is 10.4mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 154 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product deepgate, stripfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 15.75mm. In addition, it has a typical 34 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.7 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 3.7mohm @ 60a, 10v. The maximum gate charge and given voltages include 171 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 75 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 300w (tc). The product's input capacitance at maximum includes 11800 pf @ 25 v. The product deepgate™, stripfet™ vi, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp210, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
N-channel 75 V, 3 mOhm, 120 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET(Technical Reference)
pdf icon
STx210N75F6(Datasheets)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search STP210N75F6 on website for other similar products.
We accept all major payment methods for all products including ET11013935. Please check your shopping cart at the time of order.
You can order STMicroelectronics brand products with STP210N75F6 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of STMicroelectronics STP210N75F6. You can also check on our website or by contacting our customer support team for further order details on STMicroelectronics STP210N75F6.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11013935 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11013935.
Yes. We ship STP210N75F6 Internationally to many countries around the world.