STMicroelectronics STH80N10F7-2
Product Information
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.17mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
H2PAK-2
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Series:
STripFET H7
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.5 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 40A, 10V
edacadModel:
STH80N10F7-2 Models
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5018866
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 50 V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VII
Supplier Device Package:
H2PAK-2
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH80N
ECCN:
EAR99
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Yes. We ship STH80N10F7-2 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STH80N10F7-2. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.17mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of h2pak-2. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 45 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 110 w maximum power dissipation. The product stripfet h7, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.8mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 9.5 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 9.5mohm @ 40a, 10v. The maximum gate charge and given voltages include 45 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 110w (tc). The product's input capacitance at maximum includes 3100 pf @ 50 v. The product deepgate™, stripfet™ vii, is a highly preferred choice for users. h2pak-2 is the supplier device package value. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sth80n, a base product number of the product. The product is designated with the ear99 code number.
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