Texas Instruments CSD22204WT
Product Information
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
1.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
8 V
Package Type:
DSBGA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.9 nC @ 4 V
Channel Type:
P
Length:
1.5mm
Pin Count:
9
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.7 W
Series:
NexFET
Maximum Gate Source Voltage:
-6 V
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
14 mΩ
Manufacturer Standard Lead Time:
6 Weeks
Detailed Description:
P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
9-UFBGA, DSBGA
Base Part Number:
CSD22204
Gate Charge (Qg) (Max) @ Vgs:
24.6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
9.9mOhm @ 2A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
8V
Vgs (Max):
-6V
Input Capacitance (Ciss) (Max) @ Vds:
1130pF @ 4V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
9-DSBGA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Customer Reference:
Power Dissipation (Max):
1.7W (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship CSD22204WT Internationally to many countries around the world.
This is manufactured by Texas Instruments. The manufacturer part number is CSD22204WT. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.5mm wide. The product offers single transistor configuration. It has a maximum of 8 v drain source voltage. The package is a sort of dsbga. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18.9 nc @ 4 v. The product is available in [Cannel Type] channel. Its accurate length is 1.5mm. It contains 9 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.7 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -6 v. In addition, the height is 0.35mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 14 mω maximum drain source resistance. It has typical 6 weeks of manufacturer standard lead time. It features p-channel 8v 5a (ta) 1.7w (ta) surface mount 9-dsbga. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 9-ufbga, dsbga. Base Part Number: csd22204. The maximum gate charge and given voltages include 24.6nc @ 4.5v. It has a maximum Rds On and voltage of 9.9mohm @ 2a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The texas instruments's product offers user-desired applications. The product has a 8v drain to source voltage. The maximum Vgs rate is -6v. The product's input capacitance at maximum includes 1130pf @ 4v. The product nexfet™, is a highly preferred choice for users. 9-dsbga is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5a (ta). The product carries maximum power dissipation 1.7w (ta). This product use mosfet (metal oxide) technology.
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