Microchip Technology LND150K1-G
Product Information
FET Feature:
Depletion Mode
Base Part Number:
LND150
Detailed Description:
N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds:
10pF @ 25V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
1000Ohm @ 500µA, 0V
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
0V
Supplier Device Package:
SOT-23-3
Manufacturer Standard Lead Time:
5 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
360mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
13mA (Tj)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microchip Technology
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Yes. We ship LND150K1-G Internationally to many countries around the world.
This is manufactured by Microchip Technology. The manufacturer part number is LND150K1-G. The FET features of the product include depletion mode. Base Part Number: lnd150. It features n-channel 500v 13ma (tj) 360mw (ta) surface mount sot-23-3. The product's input capacitance at maximum includes 10pf @ 25v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 1000ohm @ 500µa, 0v. The product has a 500v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 0v. sot-23-3 is the supplier device package value. It has typical 5 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 360mw (ta). The continuous current drain at 25°C is 13ma (tj). This product use mosfet (metal oxide) technology. The microchip technology's product offers user-desired applications.
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