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STMicroelectronics STB22NM60N

STB22NM60N STMicroelectronics
STB22NM60N
STB22NM60N
STMicroelectronics

Product Information

Category:
Power MOSFET
Dimensions:
10.75 x 10.4 x 4.6mm
Maximum Continuous Drain Current:
16 A
Transistor Material:
Si
Width:
10.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
44 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1330 pF@ 50 V
Length:
10.75mm
Pin Count:
3
Typical Turn-Off Delay Time:
74 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
MDmesh
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.6mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
220 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 100µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
220mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 50 V
Mounting Type:
Surface Mount
Series:
MDmesh™ II
Supplier Device Package:
D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB22
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STB22NM60N. It is of power mosfet category . The given dimensions of the product include 10.75 x 10.4 x 4.6mm. While 16 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 10.4mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 44 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1330 pf@ 50 v . Its accurate length is 10.75mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 74 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product mdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.6mm. In addition, it has a typical 11 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 220 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 100µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 220mohm @ 8a, 10v. The maximum gate charge and given voltages include 44 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 125w (tc). The product's input capacitance at maximum includes 1300 pf @ 50 v. The product mdmesh™ ii, is a highly preferred choice for users. d²pak (to-263) is the supplier device package value. The continuous current drain at 25°C is 16a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb22, a base product number of the product. The product is designated with the ear99 code number.

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N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in D2PAK(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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IPG-PWR/14/8603 21/Jul/2014(PCN Assembly/Origin)
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IPG-PWR/14/8422 11/Apr/2014(PCN Design/Specification)
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D2PAK Lead Modification 04/Oct/2013(PCN Design/Specification)
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STx22NM60N(Datasheets)

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Yes. We ship STB22NM60N Internationally to many countries around the world.