IXYS IXFX55N50
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
330 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
80mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Power Dissipation (Max):
625W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9400 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™
Supplier Device Package:
PLUS247™-3
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX55
ECCN:
EAR99
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FAQs
Yes. You can also search IXFX55N50 on website for other similar products.
We accept all major payment methods for all products including ET10888614. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFX55N50 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFX55N50. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFX55N50.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10888614 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10888614.
Yes. We ship IXFX55N50 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFX55N50. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3 variant. The maximum gate charge and given voltages include 330 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 80mohm @ 500ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 625w (tc). The product's input capacitance at maximum includes 9400 pf @ 25 v. The product is available in through hole configuration. The product hiperfet™, is a highly preferred choice for users. plus247™-3 is the supplier device package value. The continuous current drain at 25°C is 55a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfx55, a base product number of the product. The product is designated with the ear99 code number.
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