STMicroelectronics STB33N65M2
Product Information
Category:
Power MOSFET
Dimensions:
10.4 x 9.35 x 4.6mm
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
41.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1790 pF @ 100 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
72.5 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
190 W
Series:
MDmesh M2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
4.6mm
Typical Turn-On Delay Time:
13.5 ns
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
140 mΩ
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STB33
Gate Charge (Qg) (Max) @ Vgs:
41.5nC @ 10V
Rds On (Max) @ Id, Vgs:
140mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1790pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ M2
Supplier Device Package:
D2PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Customer Reference:
Power Dissipation (Max):
190W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by STMicroelectronics. The manufacturer part number is STB33N65M2. It is of power mosfet category . The given dimensions of the product include 10.4 x 9.35 x 4.6mm. While 24 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.35mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 41.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1790 pf @ 100 v . Its accurate length is 10.4mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 72.5 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 190 w maximum power dissipation. The product mdmesh m2, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 4.6mm. In addition, it has a typical 13.5 ns turn-on delay time . Its forward diode voltage is 1.6v . It provides up to 140 mω maximum drain source resistance. It has typical 38 weeks of manufacturer standard lead time. It features n-channel 650v 24a (tc) 190w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: stb33. The maximum gate charge and given voltages include 41.5nc @ 10v. It has a maximum Rds On and voltage of 140mohm @ 12a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 1790pf @ 100v. The product mdmesh™ m2, is a highly preferred choice for users. d2pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 24a (tc). The product carries maximum power dissipation 190w (tc). This product use mosfet (metal oxide) technology.
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