Texas Instruments CSD16406Q3
Product Information
Maximum Continuous Drain Current:
79 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
SON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.8 nC @ 4.5 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
46 W
Series:
NexFET
Maximum Gate Source Voltage:
-12 V, +16 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
7.4 mΩ
Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
N-Channel 25V 19A (Ta), 60A (Tc) 2.7W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
CSD16406
Gate Charge (Qg) (Max) @ Vgs:
8.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
5.3mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 12.5V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON-CLIP (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 60A (Tc)
Customer Reference:
Power Dissipation (Max):
2.7W (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Texas Instruments. The manufacturer part number is CSD16406Q3. While 79 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of son. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 46 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +16 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 7.4 mω maximum drain source resistance. It has typical 20 weeks of manufacturer standard lead time. It features n-channel 25v 19a (ta), 60a (tc) 2.7w (ta) surface mount 8-vson-clip (3.3x3.3). The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: csd16406. The maximum gate charge and given voltages include 8.1nc @ 4.5v. It has a maximum Rds On and voltage of 5.3mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The texas instruments's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is +16v, -12v. The product's input capacitance at maximum includes 1100pf @ 12.5v. The product nexfet™, is a highly preferred choice for users. 8-vson-clip (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 19a (ta), 60a (tc). The product carries maximum power dissipation 2.7w (ta). This product use mosfet (metal oxide) technology.
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