STMicroelectronics STB26NM60ND
Product Information
Category:
Power MOSFET
Dimensions:
10.4 x 9.35 x 4.6mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
54.6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1817 pF @ 100 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
69 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
190 W
Series:
FDmesh
Maximum Gate Source Voltage:
±25 V
Height:
4.6mm
Typical Turn-On Delay Time:
22 ns
Maximum Drain Source Resistance:
175 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
175mOhm @ 10.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
54.6 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
190W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1817 pF @ 100 V
Mounting Type:
Surface Mount
Series:
FDmesh™ II
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB26N
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search STB26NM60ND on website for other similar products.
We accept all major payment methods for all products including ET10858145. Please check your shopping cart at the time of order.
You can order STMicroelectronics brand products with STB26NM60ND directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of STMicroelectronics STB26NM60ND. You can also check on our website or by contacting our customer support team for further order details on STMicroelectronics STB26NM60ND.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10858145 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10858145.
Yes. We ship STB26NM60ND Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STB26NM60ND. It is of power mosfet category . The given dimensions of the product include 10.4 x 9.35 x 4.6mm. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.35mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 54.6 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1817 pf @ 100 v . Its accurate length is 10.4mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 69 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 190 w maximum power dissipation. The product fdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of ±25 v. In addition, the height is 4.6mm. In addition, it has a typical 22 ns turn-on delay time . It provides up to 175 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 175mohm @ 10.5a, 10v. The maximum gate charge and given voltages include 54.6 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 190w (tc). The product's input capacitance at maximum includes 1817 pf @ 100 v. The product fdmesh™ ii, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb26n, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.