IXYS MMIX1F160N30T
Product Information
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
23.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
300 V
Maximum Gate Threshold Voltage:
5V
Package Type:
SMPD
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
376 nC @ 10 V
Channel Type:
N
Length:
25.25mm
Pin Count:
24
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
570 W
Series:
GigaMOS, HiperFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
20 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
24-PowerSMD, 21 Leads
Rds On (Max) @ Id, Vgs:
20mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs:
335 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
570W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2800 pF @ 25 V
standardLeadTime:
45 Weeks
Mounting Type:
Surface Mount
Series:
GigaMOS™, HiPerFET™, TrenchT2™
Supplier Device Package:
24-SMPD
Current - Continuous Drain (Id) @ 25°C:
102A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MMIX1F160
ECCN:
EAR99
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FAQs
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You can order IXYS brand products with MMIX1F160N30T directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS MMIX1F160N30T. You can also check on our website or by contacting our customer support team for further order details on IXYS MMIX1F160N30T.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10618108 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10618108.
Yes. We ship MMIX1F160N30T Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is MMIX1F160N30T. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 23.25mm wide. The product offers single transistor configuration. It has a maximum of 300 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of smpd. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 376 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 25.25mm. It contains 24 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 570 w maximum power dissipation. The product gigamos, hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 20 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 24-powersmd, 21 leads. It has a maximum Rds On and voltage of 20mohm @ 60a, 10v. The maximum gate charge and given voltages include 335 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 300 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 570w (tc). The product's input capacitance at maximum includes 2800 pf @ 25 v. It has a long 45 weeks standard lead time. The product gigamos™, hiperfet™, trencht2™, is a highly preferred choice for users. 24-smpd is the supplier device package value. The continuous current drain at 25°C is 102a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to mmix1f160, a base product number of the product. The product is designated with the ear99 code number.
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