IXYS MMIX1F40N110P
Product Information
Category:
Power MOSFET
Dimensions:
25.25 x 23.25 x 5.7mm
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Width:
23.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1100 V
Maximum Gate Threshold Voltage:
6.5V
Maximum Drain Source Resistance:
290 mΩ
Package Type:
SMPD
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
310 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
19000 pF@ 25 V
Length:
25.25mm
Pin Count:
24
Forward Transconductance:
32S
Typical Turn-Off Delay Time:
110 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 W
Series:
HiperFET, Polar
Maximum Gate Source Voltage:
-40 V, +40 V
Height:
5.7mm
Typical Turn-On Delay Time:
53 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
24-PowerSMD, 21 Leads
Rds On (Max) @ Id, Vgs:
290mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
310 nC @ 10 V
Vgs(th) (Max) @ Id:
6.5V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
1100 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
19000 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, PolarP2™
Supplier Device Package:
24-SMPD
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MMIX1F40
ECCN:
EAR99
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FAQs
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You can order IXYS brand products with MMIX1F40N110P directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS MMIX1F40N110P. You can also check on our website or by contacting our customer support team for further order details on IXYS MMIX1F40N110P.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10082558 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10082558.
Yes. We ship MMIX1F40N110P Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is MMIX1F40N110P. It is of power mosfet category . The given dimensions of the product include 25.25 x 23.25 x 5.7mm. While 24 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 23.25mm wide. The product offers single transistor configuration. It has a maximum of 1100 v drain source voltage. The product carries 6.5v of maximum gate threshold voltage. It provides up to 290 mω maximum drain source resistance. The package is a sort of smpd. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 310 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 19000 pf@ 25 v . Its accurate length is 25.25mm. It contains 24 pins. The forward transconductance is 32s . Whereas, its typical turn-off delay time is about 110 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 w maximum power dissipation. The product hiperfet, polar, is a highly preferred choice for users. It features a maximum gate source voltage of -40 v, +40 v. In addition, the height is 5.7mm. In addition, it has a typical 53 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 24-powersmd, 21 leads. It has a maximum Rds On and voltage of 290mohm @ 20a, 10v. The maximum gate charge and given voltages include 310 nc @ 10 v. The typical Vgs (th) (max) of the product is 6.5v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 1100 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500w (tc). The product's input capacitance at maximum includes 19000 pf @ 25 v. The product hiperfet™, polarp2™, is a highly preferred choice for users. 24-smpd is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 24a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to mmix1f40, a base product number of the product. The product is designated with the ear99 code number.
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