Texas Instruments EFC4C002NLTDG
Product Information
FET Feature:
Logic Level Gate
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-XFBGA, WLCSP
Rds On (Max) @ Id, Vgs:
-
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C:
-
Configuration:
2 N-Channel (Dual) Common Drain
Package:
Bulk
Drain to Source Voltage (Vdss):
-
Input Capacitance (Ciss) (Max) @ Vds:
6200pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-WLCSP (6x2.5)
Power - Max:
2.6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
EFC4C002
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FAQs
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Yes. We ship EFC4C002NLTDG Internationally to many countries around the world.
This is manufactured by Texas Instruments. The manufacturer part number is EFC4C002NLTDG. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 2.2v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-xfbga, wlcsp. The maximum gate charge and given voltages include 45nc @ 4.5v. The product is available in 2 n-channel (dual) common drain configuration. It is shipped in bulk package . The product's input capacitance at maximum includes 6200pf @ 15v. The product is available in surface mount configuration. 8-wlcsp (6x2.5) is the supplier device package value. The maximum power of the product is 2.6w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to efc4c002, a base product number of the product.
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