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Toshiba Semiconductor and Storage SSM6L13TU(T5L,F,T)

SSM6L13TU-T5L-F-T- Toshiba Semiconductor and Storage SSM6L13TU(T5L,F,T)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate, 1.8V Drive
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
6-SMD, Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
-
Rds On (Max) @ Id, Vgs:
143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V
Current - Continuous Drain (Id) @ 25°C:
800mA (Ta)
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
268pF @ 10V, 250pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
UF6
Power - Max:
500mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6L13
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6L13TU(T5L,F,T). The FET features of the product include logic level gate, 1.8v drive. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-smd, flat leads. It has a maximum Rds On and voltage of 143mohm @ 600ma, 4v, 234mohm @ 600ma, 4v. The continuous current drain at 25°C is 800ma (ta). The product is available in n and p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 268pf @ 10v, 250pf @ 10v. The product is available in surface mount configuration. uf6 is the supplier device package value. The maximum power of the product is 500mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6l13, a base product number of the product. The product is designated with the ear99 code number.

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SSM6L13TU(Datasheets)

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