Infineon Technologies BSO203PHXUMA1
Product Information
FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
21mOhm @ 8.2A, 4.5V
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 7A 1.6W Surface Mount P-DSO-8
Input Capacitance (Ciss) (Max) @ Vds:
3750pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 100µA
Series:
OptiMOS™
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
P-DSO-8
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
1.6W
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
7A
Manufacturer:
Infineon Technologies
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FAQs
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Yes. Our products in FET, MOSFET Arrays category are shipped in lowest possible time.
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Yes. We ship BSO203PHXUMA1 Internationally to many countries around the world.
This is manufactured by Infineon Technologies. The manufacturer part number is BSO203PHXUMA1. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 21mohm @ 8.2a, 4.5v. It features mosfet array 2 p-channel (dual) 20v 7a 1.6w surface mount p-dso-8. The product's input capacitance at maximum includes 3750pf @ 15v. The maximum gate charge and given voltages include 39nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.2v @ 100µa. The product optimos™, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). p-dso-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 1.6w. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 7a. The infineon technologies's product offers user-desired applications.
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