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Toshiba Semiconductor and Storage TPC8221-H,LQ(S

TPC8221-H-LQ-S Toshiba Semiconductor and Storage TPC8221-H,LQ(S
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.3V @ 100µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C:
6A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
830pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOP
Power - Max:
450mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPC8221
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8221-H,LQ(S. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.3v @ 100µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 12nc @ 10v. It has a maximum Rds On and voltage of 25mohm @ 3a, 10v. The continuous current drain at 25°C is 6a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 830pf @ 10v. The product is available in surface mount configuration. 8-sop is the supplier device package value. The maximum power of the product is 450mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpc8221, a base product number of the product. The product is designated with the ear99 code number.

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EOL 08/Nov/2013(PCN Obsolescence/ EOL)
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Mosfets Prod Guide(Datasheets)
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TPC8221-H(Datasheets)
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PCN_Packing-Specification_BW 06/Aug/2015(PCN Packaging)

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