Vishay Siliconix SI4967DY-T1-E3
Product Information
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
450mV @ 250µA (Min)
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
23mOhm @ 7.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
55nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
-
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4967
ECCN:
EAR99
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FAQs
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Yes. We ship SI4967DY-T1-E3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SI4967DY-T1-E3. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 450mv @ 250µa (min). The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 23mohm @ 7.5a, 4.5v. The maximum gate charge and given voltages include 55nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 12v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 8-soic is the supplier device package value. The maximum power of the product is 2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to si4967, a base product number of the product. The product is designated with the ear99 code number.
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