Vishay Siliconix SI1972DH-T1-GE3
Product Information
FET Feature:
Standard
Base Part Number:
SI1972
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363)
Input Capacitance (Ciss) (Max) @ Vds:
75pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
2.8nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Series:
TrenchFET®
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
225mOhm @ 1.3A, 10V
Supplier Device Package:
SC-70-6 (SOT-363)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.25W
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1.3A
Manufacturer:
Vishay Siliconix
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Yes. Our products in FET, MOSFET Arrays category are shipped in lowest possible time.
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Yes. We ship SI1972DH-T1-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SI1972DH-T1-GE3. The FET features of the product include standard. Base Part Number: si1972. It features mosfet array 2 n-channel (dual) 30v 1.3a 1.25w surface mount sc-70-6 (sot-363). The product's input capacitance at maximum includes 75pf @ 15v. The maximum gate charge and given voltages include 2.8nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.8v @ 250µa. The product trenchfet®, is a highly preferred choice for users. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 225mohm @ 1.3a, 10v. sc-70-6 (sot-363) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.25w. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 1.3a. The vishay siliconix's product offers user-desired applications.
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