Texas Instruments CSD87334Q3DT
Product Information
Maximum Continuous Drain Current:
60 A
Width:
3.4mm
Transistor Configuration:
Dual Base
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.2V
Maximum Drain Source Resistance:
8.3 mΩ
Package Type:
VSON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.75V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.5 nC
Channel Type:
P
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
6 W
Series:
NexFET
Maximum Gate Source Voltage:
-8 V, +10 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs:
8.3nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD87334Q3DT Models
Current - Continuous Drain (Id) @ 25°C:
-
edacadModelUrl:
/en/models/5414497
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1260pF @ 15V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON (3.3x3.3)
Power - Max:
6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD87334Q3
ECCN:
EAR99
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This is manufactured by Texas Instruments. The manufacturer part number is CSD87334Q3DT. While 60 a of maximum continuous drain current. Furthermore, the product is 3.4mm wide. The product offers dual base transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.2v of maximum gate threshold voltage. It provides up to 8.3 mω maximum drain source resistance. The package is a sort of vson. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.75v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10.5 nc. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 6 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +10 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 6mohm @ 12a, 8v. The maximum gate charge and given voltages include 8.3nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The product is available in 2 n-channel (dual) asymmetrical configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1260pf @ 15v. It has a long 6 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 8-vson (3.3x3.3) is the supplier device package value. The maximum power of the product is 6w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd87334q3, a base product number of the product. The product is designated with the ear99 code number.
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