Maximum Power Dissipation Pd:
2.3W
Maximum Drain Source Voltage Vds:
20V
Maximum Gate Source Voltage Vgs:
10 V
Maximum Drain Source Resistance Rds:
65mΩ
Forward Voltage Vf:
1V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
4.2nC
Package Type:
WSON
Minimum Operating Temperature:
-55°C
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
5A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Automotive Standard:
No
Mount Type:
Surface
FET Feature:
Logic Level Gate, 5V Drive
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
27mOhm @ 5A, 4.5V
title:
CSD85301Q2T
Vgs(th) (Max) @ Id:
1.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD85301Q2T Models
Current - Continuous Drain (Id) @ 25°C:
5A
edacadModelUrl:
/en/models/5114779
Configuration:
2 N-Channel (Dual)
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
469pF @ 10V
Mounting Type:
Surface Mount
Series:
NexFET™
Gate Charge (Qg) (Max) @ Vgs:
5.4nC @ 4.5V
Supplier Device Package:
6-WSON (2x2)
Packaging:
Tape & Reel (TR)
Power - Max:
2.3W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD85301
ECCN:
EAR99
