Texas Instruments CSD85312Q3E
Product Information
FET Feature:
Logic Level Gate, 5V Drive
Base Part Number:
CSD85312
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
Input Capacitance (Ciss) (Max) @ Vds:
2390pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
15.2nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Series:
NexFET™
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
12.4mOhm @ 10A, 8V
Supplier Device Package:
8-VSON (3.3x3.3)
Manufacturer Standard Lead Time:
6 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Source
Customer Reference:
Power - Max:
2.5W
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
39A
Manufacturer:
Texas Instruments
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This is manufactured by Texas Instruments. The manufacturer part number is CSD85312Q3E. The FET features of the product include logic level gate, 5v drive. Base Part Number: csd85312. It features mosfet array 2 n-channel (dual) common source 20v 39a 2.5w surface mount 8-vson (3.3x3.3). The product's input capacitance at maximum includes 2390pf @ 10v. The maximum gate charge and given voltages include 15.2nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.4v @ 250µa. The product nexfet™, is a highly preferred choice for users. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 12.4mohm @ 10a, 8v. 8-vson (3.3x3.3) is the supplier device package value. It has typical 6 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual) common source. The maximum power of the product is 2.5w. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 39a. The texas instruments's product offers user-desired applications.
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