Toshiba Semiconductor and Storage RN2105MFV,L3F(CT

RN2105MFV-L3F-CT Toshiba Semiconductor and Storage RN2105MFV,L3F(CT
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
2.2 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
250 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP - Pre-Biased
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
52 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
VESM
Power - Max:
150 mW
Base Product Number:
RN2105
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2105MFV,L3F(CT. Resistor - Base - 2.2 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in sot-723. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. The 300mv @ 500µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 52 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. vesm is the supplier device package value. The maximum power of the product is 150 mw. Moreover, it corresponds to rn2105, a base product number of the product. The product is designated with the ear99 code number.

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Yes. Our products in Single, Pre-Biased Bipolar Transistors category are shipped in lowest possible time.
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