Toshiba Semiconductor and Storage TDTA114Y,LM
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
TDTA114
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 320mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
90 @ 5mA, 5V
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
10 kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10 kOhms
Power - Max:
320mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Single, Pre-Biased Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TDTA114Y,LM. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TDTA114Y,LM.
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Yes. We ship TDTA114Y,LM Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TDTA114Y,LM. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: tdta114. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 250mhz 320mw surface mount sot-23-3. Furthermore, 90 @ 5ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. Resistor - Base - 10 kohms. The 300mv @ 500µa, 10ma is the maximum Vce saturation. sot-23-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 10 kohms. The maximum power of the product is 320mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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