Toshiba Semiconductor and Storage MT3S113TU,LF
Product Information
Base Part Number:
MT3S113
Detailed Description:
RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM
Noise Figure (dB Typ @ f):
1.45dB @ 1GHz
Transistor Type:
NPN
Frequency - Transition:
11.2GHz
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
100mA
Customer Reference:
Supplier Device Package:
UFM
Voltage - Collector Emitter Breakdown (Max):
5.3V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
900mW
Gain:
12.5dB
Package / Case:
3-SMD, Flat Lead
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 30mA, 5V
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Bipolar RF Transistors category are shipped in lowest possible time.
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Yes. We ship MT3S113TU,LF Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is MT3S113TU,LF. Base Part Number: mt3s113. It features rf transistor npn 5.3v 100ma 11.2ghz 900mw surface mount ufm. It has given noise figure of 1.45db @ 1ghz at given frequency. The transistor is a npn type. The transition frequency of the product is 11.2ghz. The product is available in surface mount configuration. The maximum collector current includes 100ma. ufm is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 5.3v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 900mw. The 12.5db is the gain value of a bespoke product. Moreover, the product comes in 3-smd, flat lead. Furthermore, 200 @ 30ma, 5v is the minimum DC current gain at given voltage. The toshiba semiconductor and storage's product offers user-desired applications.
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