This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N4957. The maximum collector current includes 30ma. It features rf transistor pnp 30v 30ma 200mw through hole to-72. It has given noise figure of 3.5db @ 450mhz at given frequency. The transistor is a pnp type. The product is available in through hole configuration. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. to-72 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200mw. The 25db is the gain value of a bespoke product. Moreover, the product comes in to-72-3 metal can. Furthermore, 30 @ 5ma, 10v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
Reviews
Be the first
to
review.
Don’t hesitate to ask questions for
better
clarification.
Related products
FAQs
Yes. You can also search JAN2N4957 on website for other similar products.
We accept all major payment methods for all products including ET10143388. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N4957 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar RF Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N4957. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N4957.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10143388 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10143388.
Yes. We ship JAN2N4957 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N4957. The maximum collector current includes 30ma. It features rf transistor pnp 30v 30ma 200mw through hole to-72. It has given noise figure of 3.5db @ 450mhz at given frequency. The transistor is a pnp type. The product is available in through hole configuration. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. to-72 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200mw. The 25db is the gain value of a bespoke product. Moreover, the product comes in to-72-3 metal can. Furthermore, 30 @ 5ma, 10v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.