Toshiba Semiconductor and Storage HN1B04F(TE85L,F)
Product Information
Current - Collector (Ic) (Max):
500mA
HTSUS:
8541.21.0075
Operating Temperature:
150°C (TJ)
Package / Case:
SC-74, SOT-457
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 100mA, 1V
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
30V
Transistor Type:
NPN, PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SM6
Power - Max:
300mW
Base Product Number:
HN1B04
ECCN:
EAR99
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FAQs
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You can order Toshiba Semiconductor and Storage brand products with HN1B04F(TE85L,F) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistor Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage HN1B04F(TE85L,F). You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage HN1B04F(TE85L,F).
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14928331 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14928331.
Yes. We ship HN1B04F(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1B04F(TE85L,F). The maximum collector current includes 500ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-74, sot-457. Furthermore, 70 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 250mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 30v. The transistor is a npn, pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sm6 is the supplier device package value. The maximum power of the product is 300mw. Moreover, it corresponds to hn1b04, a base product number of the product. The product is designated with the ear99 code number.
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