Infineon Technologies IPB020NE7N3G
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3.8V @ 273µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
206 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
14400 pF @ 37.5 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 3
Supplier Device Package:
PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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We accept all major payment methods for all products including ET22554016. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IPB020NE7N3G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IPB020NE7N3G. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IPB020NE7N3G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22554016 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22554016.
Yes. We ship IPB020NE7N3G Internationally to many countries around the world.
This is manufactured by Infineon Technologies. The manufacturer part number is IPB020NE7N3G. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3.8v @ 273µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 206 nc @ 10 v. It has a maximum Rds On and voltage of 2mohm @ 100a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 75 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 300w (tc). The product's input capacitance at maximum includes 14400 pf @ 37.5 v. The product is available in surface mount configuration. The product optimos™ 3, is a highly preferred choice for users. pg-to263-3-2 is the supplier device package value. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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