Transphorm TP65H070LDG
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.8V @ 700µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-PowerDFN
Gate Charge (Qg) (Max) @ Vgs:
9.3 nC @ 10 V
Rds On (Max) @ Id, Vgs:
85mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 400 V
Mounting Type:
Surface Mount
Series:
TP65H070L
Supplier Device Package:
3-PQFN (8x8)
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
GaNFET (Cascode Gallium Nitride FET)
Base Product Number:
TP65H070
ECCN:
EAR99
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FAQs
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You can order Transphorm brand products with TP65H070LDG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Transphorm TP65H070LDG. You can also check on our website or by contacting our customer support team for further order details on Transphorm TP65H070LDG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18305698 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Transphorm" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18305698.
Yes. We ship TP65H070LDG Internationally to many countries around the world.
This is manufactured by Transphorm. The manufacturer part number is TP65H070LDG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.8v @ 700µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-powerdfn. The maximum gate charge and given voltages include 9.3 nc @ 10 v. It has a maximum Rds On and voltage of 85mohm @ 16a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 96w (tc). The product's input capacitance at maximum includes 600 pf @ 400 v. The product is available in surface mount configuration. The product tp65h070l, is a highly preferred choice for users. 3-pqfn (8x8) is the supplier device package value. The continuous current drain at 25°C is 25a (tc). This product use ganfet (cascode gallium nitride fet) technology. Moreover, it corresponds to tp65h070, a base product number of the product. The product is designated with the ear99 code number.
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