onsemi 2N5308_D75Z
Product Information
Current - Collector (Ic) (Max):
1.2 A
HTSUS:
8541.21.0095
Voltage - Collector Emitter Breakdown (Max):
40 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
7000 @ 2mA, 5V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1.4V @ 200µA, 200mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Package:
Tape & Box (TB)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
2N5308
ECCN:
EAR99
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Yes. We ship 2N5308_D75Z Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is 2N5308_D75Z. The maximum collector current includes 1.2 a. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector emitter breakdown voltage of the product is 40 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 7000 @ 2ma, 5v is the minimum DC current gain at given voltage. The 1.4v @ 200µa, 200ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tape & box (tb) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n5308, a base product number of the product. The product is designated with the ear99 code number.
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