Automotive Standard:
No
Maximum Power Dissipation Pd:
117W
Maximum Drain Source Voltage Vds:
1200V
Channel Mode:
N
Maximum Gate Source Voltage Vgs:
22 V
Series:
NTT
Forward Voltage Vf:
1.2V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
13nC
Package Type:
WDFN
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
22mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
58A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
8
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
14.4mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 78µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.7W (Ta), 62W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
965 pF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
9.2A (Ta), 45A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
