Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
320W
Maximum Drain Source Voltage Vds:
30V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Series:
STH
Forward Voltage Vf:
1.5V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
52.6nC
Package Type:
HU3PAK
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
45mΩ
Standards/Approvals:
UL
Maximum Continuous Drain Current Id:
55A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
7
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
97mOhm @ 18.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
52.6 nC @ 10 V
Vgs(th) (Max) @ Id:
4.75V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
320W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2211 pF @ 100 V
Qualification:
AEC-Q101
standardLeadTime:
99 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
HU3PAK
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
