Silicon carbide Power MOSFET 1200 V, 35
Product Information
Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.052 Ω
Package Type:
H2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
60 A
Transistor Material:
Silicon
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
52mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
94 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SCTH60N120G2-7 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/16609513
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Power Dissipation (Max):
390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1969 pF @ 800 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
H2PAK-7
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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Yes. We ship SCTH60N120G2-7 Internationally to many countries around the world.
This is Silicon carbide Power MOSFET 1200 V 35 manufactured by STMicroelectronics. The manufacturer part number is SCTH60N120G2-7. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.052 ω maximum drain source resistance. The package is a sort of h2pak-7. It consists of 1 elements per chip. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 52mohm @ 30a, 10v. The maximum gate charge and given voltages include 94 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in tape & reel (tr) package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +22v, -10v. The product carries maximum power dissipation 390w (tc). The product's input capacitance at maximum includes 1969 pf @ 800 v. It has a long 52 weeks standard lead time. h2pak-7 is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.
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