onsemi NTH4LN040N65S3H
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.04 Ω
Package Type:
TO-247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
62 A
Transistor Material:
Si
Pin Count:
4
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 6.8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
40mOhm @ 31A, 10V
Gate Charge (Qg) (Max) @ Vgs:
132 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
379W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6513 pF @ 400 V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-247-4
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search NTH4LN040N65S3H on website for other similar products.
We accept all major payment methods for all products including ET22278959. Please check your shopping cart at the time of order.
You can order onsemi brand products with NTH4LN040N65S3H directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi NTH4LN040N65S3H. You can also check on our website or by contacting our customer support team for further order details on onsemi NTH4LN040N65S3H.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22278959 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22278959.
Yes. We ship NTH4LN040N65S3H Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is NTH4LN040N65S3H. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product superfet iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.04 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 62 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 6.8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 40mohm @ 31a, 10v. The maximum gate charge and given voltages include 132 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 379w (tc). The product's input capacitance at maximum includes 6513 pf @ 400 v. The product superfet® iii, is a highly preferred choice for users. to-247-4 is the supplier device package value. The continuous current drain at 25°C is 62a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.