Automotive Standard:
No
Maximum Power Dissipation Pd:
107W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
30V
Channel Mode:
N
Typical Gate Charge Qg @ Vgs:
45nC
Maximum Drain Source Resistance Rds:
2.25mΩ
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.1V
Height:
3.15mm
Width:
0.8 mm
Length:
3.15mm
Package Type:
WDFN
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
162A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
8
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
2.25mOhm @ 20A, 10V
title:
NVTFS4C02NWFTAG
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 107W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2980 pF @ 15 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
28.3A (Ta), 162A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
