Automotive Standard:
No
Maximum Power Dissipation Pd:
293W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
150V
Channel Mode:
N
Typical Gate Charge Qg @ Vgs:
79nC
Maximum Drain Source Resistance Rds:
5mΩ
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Height:
8.5mm
Width:
1.2 mm
Length:
8.1mm
Package Type:
TDFN
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
174A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
8
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
4.45mOhm @ 95A, 10V
title:
NTMTSC4D3N15MC
Vgs(th) (Max) @ Id:
4.5V @ 521µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 293W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
6514 pF @ 75 V
Mounting Type:
Surface Mount, Wettable Flank
Series:
Dual Cool™
Gate Charge (Qg) (Max) @ Vgs:
79 nC @ 10 V
Supplier Device Package:
8-TDFNW (8.3x8.4)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 174A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
