Forward Voltage Vf:
1.2V
Width:
1.1 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
58nC
Package Type:
TDFN
Maximum Continuous Drain Current Id:
30A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
95mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
650V
Channel Type:
Type N
Length:
8.1mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
208W
Channel Mode:
N
Maximum Gate Source Voltage Vgs:
30 V
Series:
SUPERFET III
Height:
8.1mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Rds On (Max) @ Id, Vgs:
95mOhm @ 15A, 10V
title:
NTMT095N65S3H
Vgs(th) (Max) @ Id:
4V @ 2.8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2833 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
Supplier Device Package:
4-TDFN (8x8)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
