Forward Voltage Vf:
1.2V
Width:
1.1 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
33nC
Package Type:
SO-8
Maximum Continuous Drain Current Id:
79A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
20mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
120V
Channel Type:
Type N
Length:
6.3mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
102W
Channel Mode:
P
Maximum Gate Source Voltage Vgs:
20 V
Series:
NTMF
Height:
5.3mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
8mOhm @ 36A, 10V
title:
NTMFS008N12MCT1G
Vgs(th) (Max) @ Id:
4V @ 200µA
REACH Status:
REACH Unaffected
edacadModel:
NTMFS008N12MCT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/14545485
Drain to Source Voltage (Vdss):
120 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.7W (Ta), 102W (Tc)
standardLeadTime:
30 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2705 pF @ 60 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 79A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
