onsemi NTBG015N065SC1
Product Information
Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
145 A
Mounting Type:
Surface Mount
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.018 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.3V @ 25mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
18mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs:
283 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4689 pF @ 325 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK-7
Current - Continuous Drain (Id) @ 25°C:
145A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi NTBG015N065SC1. You can also check on our website or by contacting our customer support team for further order details on onsemi NTBG015N065SC1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21919614 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21919614.
Yes. We ship NTBG015N065SC1 Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is NTBG015N065SC1. It has a maximum of 650 v drain source voltage. While 145 a of maximum continuous drain current. The product is available in surface mount configuration. The product sic power, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.018 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. The transistor is manufactured from highly durable sic material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.3v @ 25ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 18mohm @ 75a, 18v. The maximum gate charge and given voltages include 283 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +22v, -8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500w (tc). The product's input capacitance at maximum includes 4689 pf @ 325 v. It has a long 6 weeks standard lead time. d2pak-7 is the supplier device package value. The continuous current drain at 25°C is 145a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.
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