Automotive Standard:
No
Maximum Power Dissipation Pd:
277W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
1200V
Typical Gate Charge Qg @ Vgs:
61nC
Series:
SCTWA40N120G2V-4
Maximum Gate Source Voltage Vgs:
22 V
Forward Voltage Vf:
3.3V
Height:
5.1mm
Width:
21.1 mm
Length:
15.9mm
Package Type:
Hip-247
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
70mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
45A
Channel Type:
Type N
Maximum Operating Temperature:
200°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
100mOhm @ 20A, 18V
Gate Charge (Qg) (Max) @ Vgs:
61 nC @ 18 V
Vgs(th) (Max) @ Id:
4.9V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
SCTWA40N120G2V-4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/18085070
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+18V, -5V
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1233 pF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Power Dissipation (Max):
277W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SCTWA40
ECCN:
EAR99
