Forward Voltage Vf:
4V
Width:
15.37 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
56nC
Package Type:
TO-247
Maximum Continuous Drain Current Id:
31A
Product Type:
MOSFET & Diode
Maximum Drain Source Resistance Rds:
110mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
1200V
Channel Type:
Type N
Length:
39.75mm
Standards/Approvals:
RoHS
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
178W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Series:
NTH
Height:
4.48mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
110mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 20 V
Vgs(th) (Max) @ Id:
4.3V @ 5mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -15V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
178W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1670 pF @ 800 V
Qualification:
AEC-Q101
standardLeadTime:
8 Weeks
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTHL080
ECCN:
EAR99
