Forward Voltage Vf:
1.2V
Width:
3.2 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
4nC
Package Type:
PQFN
Maximum Continuous Drain Current Id:
150A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
1.3mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
25V
Channel Type:
Type N
Length:
3.2mm
Standards/Approvals:
RoHS
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
46W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Series:
Power
Height:
0.7mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 700µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
+16V, -12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
800mW (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3159 pF @ 13 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-PQFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 152A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTTFS1
ECCN:
EAR99
